RADIO PHYSICS AND RADIO ASTRONOMY

The PHEMTs are proposed to be used as circuit elements for low-power-consumption microwave (1− 4 GHz) amplifiers operating in a wide temperature range environment. Experimental amplifier operates within temperatures −100 to +100°C preserving the general electrical properties. It seems reasonable to conclude prospects of using GaAs PHEMTs in the stand-by receivers operating in extreme environment conditions.

Key words: pseudomorphic field-effect transistor with high electron mobility, microwave amplifier, low source voltage, temperature stability

Manuscript submitted 18.12.2013

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