ASYMMETRIC SLOT LINES FOR CREATING MILLIMETER-WAVE SEMICONDUCTOR COMPONENTS
Abstract
Subject and Purpose. Creating hybrid-integrated semiconductor components in the millimeter wave range implies simplified manufacturing technology and reduced labor intensity. At the same time, these components offer the potential for improved electrical parameters compared to the waveguide counterparts. The article aims to explore methods for creating millimeter-wave devices using a waveguide asymmetric slot line combined with an asymmetric stripline accommodating active semiconductor structures.
Methods and Methodology. The development of millimeter-wave hybrid-integrated semiconductor active components upon transistors, avalanche diodes, and p–i–n diodes is considered. An asymmetric slot line (ASL) is used as a transmission line installed in the E-plane of a regular waveguide. The ASL base material is a low-loss dielectric stuff RT/duroid 5880 with dielectric constant ε = 2.2. The semiconductor elements are bonded to a short section of an asymmetric stripline fabricated by partial metallization of an asymmetric corner line. The insertion of a low-impedance asymmetric stripline section equipped with a heat sink allows efficient active semiconductor microwave components of continuous-wave and pulse modes. This design also supports high-speed switching devices of a wide frequency band of operation.
Results. Directing away large heat fluxes generated during the operation of the active elements is a growing challenge in developing and making millimeter-wave semiconductor components. The paper provides examples of the efficient microwave power level increase by reducing the operating temperature of the components. Extended-geometry active components (IM- PATT diodes) also serve the purpose. These methods enabled us to increase the output power of the microwave devices by 40 to 50%, the temperature of the p-n junction of the active element therewith was not increasing. This allows microwave power amplifiers to be built around semiconductor distributed-parameter structures like narrow, wavelength-comparable strips.
Conclusion. The authors’ developments have been presented against the background of contemporary information on the current state and progress in the creation of millimeter-wave components of hybrid-integrated design.
Keywords: asymmetric slot line; asymmetric stripline; IMPATT diode; heat sink; p–i–n diode; thermal resistance; millimeter range; waveguide slot line
Manuscript submitted 10.12.2024
Radio phys. radio astron. 2025, 30(2): 120-128
REFERENCES
1. Dib, N.I., Harokopus, W.P., Katehi, P.B., Ling, C.C., Rebeiz, G.M, 1991. Study of novel planar transmission line. In: IEEE MTT-S International Microwave Symposium Digest. Boston, MA, USA, 10—14 July 1991, pp. 623—626. DOI: 10.1109/ MWSYM.1991.147080
2. Kravchuk, S.O., Narytnyk, T.M., 2015. Terahertz range telecommunications systems. Monograph. Zhitomir: IE «Eve- nok О.О.». 208 с.
3. Kasatkin, L.V., and Karushkin, N.F., 2000. Stabilization of RF Injection-locked Pulsed IMPATT Oscillators. Microwave Journal (MWJ), September, pp. 172—80.
4. Zgurovsky, M.Z., Ilchenko, M.E., Kravchuk, S.A., Narytnyk, T.M., Yakymenko, Y.M., 2003. Microwave devices of telecom- munication systems. Vol. 1. Kyiv: Publishing house Polytechnic.
5. Fitsimmons, Q.W., 1972. Heat Sinking C. W. TRAPATT – oscillations. Microwaves, 8, pp. 50—59.
6. Kasatkin, L.V., Chaika, V.E., 2006. Semiconductor devices of the millimeter wave range. Sevastopol: Weber Publ.
7. Karushkin, M.F., 1999. Millimeter-range power sources on avalanche-flight diodes with distributed parameters. University Bull. Radioelectronics, 42(7), pp. 47—54.
8. Butorin, V.M., Karushkin, N.F., 1997. Semiconductor microwave diode. Ukraine Pat. 15048 (in Ukrainian).
9. Kasatkin, L.V., Rukin, V.P., 2005. Power semiconductor pulsers with injection locking for millimeter range of wavelengths.
Radioelectron. Commun. Syst., 48(6), pp. 1—11. DOI: 10.3103/S0735272705060014
10. Bychok, A., Volkov, Ye., Karushkin, N., Rukyn, V., 2024. THz-radiation sources on silicon avalanche transit time diodes. Radioelectron. Commun. Syst., 67(4), pp. 212—224. DOI: 10.20535/S0021347024050030
11. Karushkin, N., Obukhov, I., 2021. Source of submillimeter radiation on silicon avalanche-drive diodes. Infocommunication and radioelectronic technologies, 4(2), pp. 95—106.
12. Courtney, P.G., Zeng, J. Tran, Th., Trinh, H., Behan, S., 2015. 120W Ka Band Power Amplifier Utilizing GaN MMICs and Coaxial Waveguide Spatial Power Combining. In: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). New Orleans, LA, USA, 11—14 Oct. 2015. [pdf]. IEEE, 2015. Available from: www.qorvo.com/-/media/files/ qorvopublic/white-papers/120-watt-ka-band-power-amplifier-utilizing-gan-mmics-and-coaxial-waveguide-spatial-pow- er-combining.pdf
13. Tkachenko, V.V., Mai, A.V., Mai, V.I., Udod, Y.O., Ugrin, M.I., 2006. Monolithic frequency converters 5 and 3 bands. Tech- nology and design in electronic equipment, 5, pp. 7—8.
14. Bosy, V.I., Ivashchuk, O.V., Kovalchuk, V.N., Semashko, O.M., 2003. Power UHF transistors on the wide bandgap semicon- ductors. Technology and design in electronic equipment, 3, pp. 53—58.
15. Kornaukhov, A.V., Shabanov, V.M., 1976. Amplification of electromagnetic waves in a distributed avalanche-span diode. University Bull. Radioelectron., XIX(3), pp. 29—33.
16. Avdeenko, G.L., Bychok, A.V., Narytnyk, T.M., Karushkin, M.F., Kryuchkova, L.P., 2024. Solid-state powerful semiconduc- tor sources of millimeter waves on semiconductor diode elements. In: Materials of the International Scientific and Technical Conference «Information and Communication Technologies and Cybersecurity» (IKTK-2024), pp. 36—49. Kharkiv, KhNURE Publ.
17. Karushkin, N.F., Malyshko, V.V., Orekhovsky, V.A., Tukharynov, A.A., 2016. Millimeter wave p–i–n-diode switching con- trolled devices. Technology and design in electronic equipment, 4—5, pp. 34—41. DOI: 10.15222/TKEA2016.4-5.34
Methods and Methodology. The development of millimeter-wave hybrid-integrated semiconductor active components upon transistors, avalanche diodes, and p–i–n diodes is considered. An asymmetric slot line (ASL) is used as a transmission line installed in the E-plane of a regular waveguide. The ASL base material is a low-loss dielectric stuff RT/duroid 5880 with dielectric constant ε = 2.2. The semiconductor elements are bonded to a short section of an asymmetric stripline fabricated by partial metallization of an asymmetric corner line. The insertion of a low-impedance asymmetric stripline section equipped with a heat sink allows efficient active semiconductor microwave components of continuous-wave and pulse modes. This design also supports high-speed switching devices of a wide frequency band of operation.
Results. Directing away large heat fluxes generated during the operation of the active elements is a growing challenge in developing and making millimeter-wave semiconductor components. The paper provides examples of the efficient microwave power level increase by reducing the operating temperature of the components. Extended-geometry active components (IM- PATT diodes) also serve the purpose. These methods enabled us to increase the output power of the microwave devices by 40 to 50%, the temperature of the p-n junction of the active element therewith was not increasing. This allows microwave power amplifiers to be built around semiconductor distributed-parameter structures like narrow, wavelength-comparable strips.
Conclusion. The authors’ developments have been presented against the background of contemporary information on the current state and progress in the creation of millimeter-wave components of hybrid-integrated design.
Keywords: asymmetric slot line; asymmetric stripline; IMPATT diode; heat sink; p–i–n diode; thermal resistance; millimeter range; waveguide slot line
Manuscript submitted 10.12.2024
Radio phys. radio astron. 2025, 30(2): 120-128
REFERENCES
1. Dib, N.I., Harokopus, W.P., Katehi, P.B., Ling, C.C., Rebeiz, G.M, 1991. Study of novel planar transmission line. In: IEEE MTT-S International Microwave Symposium Digest. Boston, MA, USA, 10—14 July 1991, pp. 623—626. DOI: 10.1109/ MWSYM.1991.147080
2. Kravchuk, S.O., Narytnyk, T.M., 2015. Terahertz range telecommunications systems. Monograph. Zhitomir: IE «Eve- nok О.О.». 208 с.
3. Kasatkin, L.V., and Karushkin, N.F., 2000. Stabilization of RF Injection-locked Pulsed IMPATT Oscillators. Microwave Journal (MWJ), September, pp. 172—80.
4. Zgurovsky, M.Z., Ilchenko, M.E., Kravchuk, S.A., Narytnyk, T.M., Yakymenko, Y.M., 2003. Microwave devices of telecom- munication systems. Vol. 1. Kyiv: Publishing house Polytechnic.
5. Fitsimmons, Q.W., 1972. Heat Sinking C. W. TRAPATT – oscillations. Microwaves, 8, pp. 50—59.
6. Kasatkin, L.V., Chaika, V.E., 2006. Semiconductor devices of the millimeter wave range. Sevastopol: Weber Publ.
7. Karushkin, M.F., 1999. Millimeter-range power sources on avalanche-flight diodes with distributed parameters. University Bull. Radioelectronics, 42(7), pp. 47—54.
8. Butorin, V.M., Karushkin, N.F., 1997. Semiconductor microwave diode. Ukraine Pat. 15048 (in Ukrainian).
9. Kasatkin, L.V., Rukin, V.P., 2005. Power semiconductor pulsers with injection locking for millimeter range of wavelengths.
Radioelectron. Commun. Syst., 48(6), pp. 1—11. DOI: 10.3103/S0735272705060014
10. Bychok, A., Volkov, Ye., Karushkin, N., Rukyn, V., 2024. THz-radiation sources on silicon avalanche transit time diodes. Radioelectron. Commun. Syst., 67(4), pp. 212—224. DOI: 10.20535/S0021347024050030
11. Karushkin, N., Obukhov, I., 2021. Source of submillimeter radiation on silicon avalanche-drive diodes. Infocommunication and radioelectronic technologies, 4(2), pp. 95—106.
12. Courtney, P.G., Zeng, J. Tran, Th., Trinh, H., Behan, S., 2015. 120W Ka Band Power Amplifier Utilizing GaN MMICs and Coaxial Waveguide Spatial Power Combining. In: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). New Orleans, LA, USA, 11—14 Oct. 2015. [pdf]. IEEE, 2015. Available from: www.qorvo.com/-/media/files/ qorvopublic/white-papers/120-watt-ka-band-power-amplifier-utilizing-gan-mmics-and-coaxial-waveguide-spatial-pow- er-combining.pdf
13. Tkachenko, V.V., Mai, A.V., Mai, V.I., Udod, Y.O., Ugrin, M.I., 2006. Monolithic frequency converters 5 and 3 bands. Tech- nology and design in electronic equipment, 5, pp. 7—8.
14. Bosy, V.I., Ivashchuk, O.V., Kovalchuk, V.N., Semashko, O.M., 2003. Power UHF transistors on the wide bandgap semicon- ductors. Technology and design in electronic equipment, 3, pp. 53—58.
15. Kornaukhov, A.V., Shabanov, V.M., 1976. Amplification of electromagnetic waves in a distributed avalanche-span diode. University Bull. Radioelectron., XIX(3), pp. 29—33.
16. Avdeenko, G.L., Bychok, A.V., Narytnyk, T.M., Karushkin, M.F., Kryuchkova, L.P., 2024. Solid-state powerful semiconduc- tor sources of millimeter waves on semiconductor diode elements. In: Materials of the International Scientific and Technical Conference «Information and Communication Technologies and Cybersecurity» (IKTK-2024), pp. 36—49. Kharkiv, KhNURE Publ.
17. Karushkin, N.F., Malyshko, V.V., Orekhovsky, V.A., Tukharynov, A.A., 2016. Millimeter wave p–i–n-diode switching con- trolled devices. Technology and design in electronic equipment, 4—5, pp. 34—41. DOI: 10.15222/TKEA2016.4-5.34
Keywords
asymmetric slot line; asymmetric stripline; IMPATT diode; heat sink; p–i–n diode; thermal resistance; millimeter range; waveguide slot line
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