Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts

I. P. Storozhenko

Abstract


Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n–-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown to outperform by output and generation efficiency those employing spatially homogeneous AlxGa1-xAs compound semiconductor within the whole frequency range for x=0ё0.2.

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References


Стороженко И.П. Диоды Ганна на основе варизонного Alx(z)Ga1-x(z)As c различными катодными контактами / И.П. Стороженко // Радиофизика и радиоастрономия. — 2006. — Т. 11, № 2. — С. 186-198.




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