Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors

Abstract

The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteristic. In support of the offered method efficiency, the results of examination of amplifiers on different transistors are brought.